REDONDO BEACH, Calif. – June 3, 2014 – A pioneer in the design and fabrication of advanced semiconductors, Northrop Grumman Corporation (NYSE:NOC) has introduced two new high power gallium nitride (GaN) monolithic microwave integrated circuit (MMIC) power amplifiers for Ka-band satellite communication terminals and point-to-point digital communication links.
The APN228 and APN229 power amplifiers were developed with the company's proprietary GaN high-electron mobility transistor (HEMT) power process and provide unmatched saturated output power of 13 and 8 watts, respectively. These second-generation power amplifiers offer the highest power density of any existing Ka-band GaN product on the market.
Northrop Grumman Introduces High Power GaN Amplifiers for Ka-band Satellite Communication Terminals (NYSE:NOC)
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